The Applied Producer HARP (High Aspect Ratio Process) system is a thermal,
non-plasma-based CVD (Chemical Vapor Deposition) solution that addresses the stringent gap-fill requirements for shallow trench isolation (STI) and pre-metal dielectric (PMD) unit processes, with extendibility beyond 45nm. Using patented ozone/TEOS chemistry, the unique HARP process enables enhanced transistor performance by depositing strain-inducing films that can significantly increase transistor drive current in Logic and retention times in Memory devices, without added integration complexity or cost. Thesestrain engineeringbenefits are additive when HARP is used with other strain-inducing films such as Stress Nitride and SiGe epitaxy. The non-plasma deposition process also eliminates plasma damage, resulting in high device reliability.
HARP STI fill
65nm, > 6:1 A/R
The Applied HARP process runs on the production-proven, high-throughput Producer platform. With its innovative Twin Chamber architecture, the Producer platform enables simultaneous processing of up to six wafers for superior productivity and significant reduction in cost of ownership with high system reliability. Platform extendibility enables customers to leverage the Producer toolset for multiple process nodes.
