Applied Materials provides a complete suite of epi solutions for semiconductor manufacturing, from substrate formation to advanced Logic and Memory applications. Applied Centura RP Epi enables strain engineering in Logic through selective SiGe recessed source/drain to deliver exceptional drive current improvement. In DRAM, Centura RP Epi for elevated source/drain improves yield and retention time.

Applied’s proprietary chamber technology and robust platform result in tight manufacturing process control and world-class production-worthiness.

Enabling transistor performance

	Strain engineering significantly improves device performance. Applied Centura RP Epi delivers selective SiGe for recessed source/drain, proven to enhance PMOS drive currents >60%
	When combined with compressive stress nitride etch stop layer, the additive benefits result in >85% drive current improvement

Superior chamber technology

	Small chamber volume and proprietary dome design create the largest process window for 100% selective, facet-free epi applications
	Flexible tuning for dopant and thickness uniformity control
	Optical pyrometry for superior temperature measurement and control

Robust, high productivity platform

	Production-proven in Logic, DRAM and wafer manufacturing fabs
	Vacuum batch load-locks for ambient control ensure high quality selective epi growth
	Configurable 2- or 4-chamber platform