Endura iLB PVD/CVD
The Applied Endura iLB (Integrated Liner/Barrier) system delivers unique integrated PVD (Physical Vapor Deposition) Ti liner, and MOCVD (Metal Organic Chemical Vapor Deposition) TiN barrier technologies for advanced contact applications. These solutions enable low, uniform contact resistance on unlanded vias and borderless contacts by eliminating interfacial oxide layers formed by vacuum breaks between process steps. Delivering very thin films with conformal step coverage, Endura iLB provides low cost of ownership, high productivity, and superior manufacturability.

The next-generation Applied Endura iLB II system addresses the new liner/barrier challenges with the transition to ≤45nm nodes, including the use of thin NiSi films in gate and contact applications as well as tighter requirements for step coverage and contact resistance. The system combines the innovative Siconi Preclean with its selective chemical cleaning capability without loss of the thin silicide layers, the eSIP (Enhanced Self-Ionized Plasma) Ti chamber for high step coverage PVD Ti deposition with excellent symmetry, and the TxZ CVD TiN chamber with a low-temperature process for superior step coverage and enhanced throughput. Together, these technologies extend the tungsten contact scheme to the 45nm node and beyond.

Endura SIP TTN PVD
The Applied Endura SIP TTN (Self-Ionized Plasma Ti/TiN) PVD offers cost-effective, single-chamber liner/barrier solutions for high aspect ratio (>7:1 A/R) tungsten plug liner/barrier and aluminum via wetting layer in ≤70nm Memory applications. The SIP TTN chamber can be used for dedicated Ti and TiN deposition, or for higher cost-efficiency and throughput, as an in-situ Ti/TiN stack solution. Utilizing unique SIP magnetron source and biasable electrostatic chuck technologies, SIP TTN delivers >30% bottom coverage, twice that of conventional PVD, with low overhang and superior step coverage, enabling reduced film thickness for high throughput and low cost of ownership.