Established as the first single wafer, high current implanter in 65nm production, the Quantum X Plus enables device scaling with increased low energy, high dose performance. Its fixed beam technology combines with a precision mechanical scanning system to provide unique capabilities in Logic and Memory. Quantum X Plus enables defect engineering for ultra-shallow junction formation ≤45nm, while also delivering unparalleled angle precision for advanced memory structures.
Paired with the Applied Vantage RadiancePlus RTP and incorporating state-of-the-art understanding in
co-implantation and defect engineering technology, Quantum X Plus provides the innovative foundations for customers’ present and future high current implant needs.
Features:
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Highest productivity for ultra-shallow junction formation (200eV – 80keV) |
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Two-dimensional parallel scanning with StepScan for angle precision and iso-centric scanning for high tilt applications |
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Advanced motion control and high density fixed beam for optimal crystal defect management for mobility optimisation |
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Predictive and managed uniformity for all implants |
Applications: source/drain, source/drain extension, pre-amorphization, co-implantation, HALO applications, Plug implants, high tilt applications, etc.
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